Effects of applied magnetic fields on silicon oxide films formed by microwave plasma CVD

被引：0
|
作者：
Fukuda, Takuya [1 ]
Suzuki, Kazuo [1 ]
Takahashi, Shigeru [1 ]
Mochizuki, Yasuhiro [1 ]
Ohue, Michio [1 ]
Momma, Naohiro [1 ]
Sonobe, Tadashi [1 ]
机构：
[1] Hitachi Ltd, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
7
引用
收藏
页码：1962 / 1965
相关论文
共 50 条
  • [31] Reduction of carbon impurities in silicon oxide films prepared by rf plasma-enhanced CVD
    Teshima, K
    Inoue, Y
    Sugimura, H
    Takai, O
    THIN SOLID FILMS, 2001, 390 (1-2) : 88 - 92
  • [32] Very high frequency plasma CVD of silicon oxide
    Schade, K
    Stahr, F
    Röhlecke, S
    Steinke, O
    Richter, RH
    Schopper, F
    Heinzinger, K
    Hartung, J
    SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4): : 364 - 367
  • [33] Passivation effect of SiNx:H films formed by microwave remote plasma CVD for P-diffused substrates
    Inoshita, T
    Dhamrin, M
    Arifuku, N
    Kamisako, K
    Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, : 1092 - 1095
  • [34] Silicon carbonitride films produced by remote hydrogen microwave plasma CVD using a (dimethylamino)dimethylsilane precursor
    Blaszczyk-Lezak, I
    Wrobel, AM
    Kivitorma, MPM
    Vayrynen, IJ
    CHEMICAL VAPOR DEPOSITION, 2005, 11 (01) : 44 - 52
  • [35] Microwave plasma CVD of silicon nanocrystalline and amorphous silicon as a function of deposition conditions
    Jeung, JH
    Lee, HG
    Teng, LH
    Anderson, WA
    NANOPHASE AND NANOCOMPOSITE MATERIALS IV, 2002, 703 : 393 - 398
  • [36] Properties of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2
    Walkiewicz-Pietrzykowska, Agnieszka
    Wrobel, Aleksander M.
    Glebocki, Bartosz
    CHEMICAL VAPOR DEPOSITION, 2009, 15 (1-3) : 47 - 52
  • [37] TEM OBSERVATIONS OF DIAMOND FILMS PREPARED BY MICROWAVE PLASMA CVD
    ETO, H
    TAMOU, Y
    OHSAWA, Y
    KIKUCHI, N
    DIAMOND AND RELATED MATERIALS, 1992, 1 (2-4) : 373 - 379
  • [38] Microwave plasma deposition of CVD diamond films for MEMS applications
    Shaik, AA
    Naseem, HA
    Brown, WD
    Ang, SS
    DIAMOND MATERIALS VII, PROCEEDINGS, 2001, 2002 (25): : 252 - 263
  • [39] Microwave plasma CVD of high quality heteroepitaxial diamond films
    Heriot-Watt Univ, Edinburgh, United Kingdom
    Phys Status Solidi A, 1 (185-195):
  • [40] Formation of diamond and nanocrystalline diamond films by microwave plasma CVD
    Hiramatsu, M
    Lau, CH
    Bennett, A
    Foord, JS
    THIN SOLID FILMS, 2002, 407 (1-2) : 18 - 25
12345