Carrier localization in gallium nitride

被引：0
|
作者：
机构：
[1] Wetzel, C.
[2] Walukiewicz, W.
[3] Haller, E.E.
[4] Ager III, J.W.
[5] Chen, A.
[6] Fischer, S.
[7] Yu, P.Y.
[8] Jeanloz, R.
[9] Grzegory, I.
[10] Porowski, S.
[11] Suski, T.
[12] Amano, H.
[13] Akasaki, I.
来源：
Wetzel, C. | 1600年 / Trans Tech Publ, Zurich卷 / 196-201期
关键词：
Semiconducting gallium compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Carrier localization in gallium nitride
    Wetzel, C
    Walukiewicz, W
    Haller, EE
    Ager, JW
    Chen, A
    Fischer, S
    Yu, PY
    Jeanloz, R
    Grzegory, I
    Porowski, S
    Suski, T
    Amano, H
    Akasaki, I
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 31 - 35
  • [2] Charge carrier mobility in gallium nitride
    Malyk, Orest
    DIAMOND AND RELATED MATERIALS, 2012, 23 : 23 - 27
  • [3] Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure
    Wetzel, C.
    Walukiewicz, W.
    Haller, E. E.
    Ager, J.
    Physical Review B: Condensed Matter, 53 (03):
  • [4] Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure
    Wetzel, C
    Walukiewicz, W
    Haller, EE
    Ager, J
    Grzegory, I
    Porowski, S
    Suski, T
    PHYSICAL REVIEW B, 1996, 53 (03): : 1322 - 1326
  • [5] Influence of piezoeffect on carrier concentration in gallium nitride epilayer
    Zhang, Jianping
    Wang, Xiaoliang
    Sun, Dianzhao
    Li, Xiaobing
    Fu, Ronghui
    Kong, Meiying
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (07): : 498 - 502
  • [6] The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires
    Kar, Ayan
    Li, Qiming
    Upadhya, Prashanth C.
    Seo, Min Ah
    Wright, Jeremy
    Luk, T. S.
    Wang, George T.
    Prasankumar, Rohit P.
    APPLIED PHYSICS LETTERS, 2012, 101 (14)
  • [7] Three dimensional localization of unintentional oxygen impurities in gallium nitride
    Michalowski, Pawel Piotr
    Zlotnik, Sebastian
    Rudzinski, Mariusz
    CHEMICAL COMMUNICATIONS, 2019, 55 (77) : 11539 - 11542
  • [8] Dilute Nitride Alloys - the Optical Evidence for Carrier Localization
    Porteanu, Horia-Eugen
    Loginenko, Oleg
    Koch, Frederick
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 47 - +
  • [9] Interaction between dislocations density and carrier concentration of gallium nitride layers
    Dumiszewska, E.
    Strupinski, W.
    Zdunek, K.
    Journal of Superhard Materials, 2007, 29 (03) : 174 - 176
  • [10] Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states
    Sun, CK
    Liang, JC
    Yu, XY
    Keller, S
    Mishra, UK
    DenBaars, SP
    APPLIED PHYSICS LETTERS, 2001, 78 (18) : 2724 - 2726
12345