Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure

被引：76
|
作者：
Wetzel, C [1 ]
Walukiewicz, W [1 ]
Haller, EE [1 ]
Ager, J [1 ]
Grzegory, I [1 ]
Porowski, S [1 ]
Suski, T [1 ]
机构：
[1] POLISH ACAD SCI,UNIPRESS,PL-01142 WARSAW,POLAND
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.53.1322
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A quantitative study of the carrier localization in GaN under large hydrostatic pressure is presented using infrared reflection and Raman spectroscopy. The free-carrier concentration in as-grown n-type GaN crystals is determined optically from the phonon-plasmon-coupled mode and an analysis of the dielectric function. A strong decrease from 1x10(19) cm(-3) at ambient pressure to only 3x10(17) cm(-3) at a pressure of 27 GPa is observed. This free-carrier reduction is attributed to a strongly localized donor present at a concentration of 1x10(19) cm(-3) and it is in agreement with previous qualitative results. From our quantitative data we determine the position of the neutral-donor level to be 126(-5)(+20) meV below the conduction band at 27 GPa. We present a model for the pressure dependence of the localized defect and predict its neutral level at 0.40 +/- 0.10 eV above the conduction-band edge at ambient pressure.
引用
收藏
页码：1322 / 1326
页数：5
相关论文
共 50 条
  • [1] Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure
    Wetzel, C.
    Walukiewicz, W.
    Haller, E. E.
    Ager, J.
    Physical Review B: Condensed Matter, 53 (03):
  • [2] Carrier emission of n-type gallium nitride illuminated by femtosecond laser pulses
    Li, Runze
    Zhu, Pengfei
    Chen, Jie
    Cao, Jianming
    Rentzepis, Peter M.
    Zhang, Jie
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (23)
  • [3] Gallium nitride films of high n-type conductivity grown by reactive sputtering
    Monish, M.
    Mohan, Shyam
    Sutar, D. S.
    Major, S. S.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (04)
  • [4] Muonium transitions in n-type gallium nitride
    Dawdy, MR
    Lichti, RL
    Cox, SFJ
    Head, TL
    Schwab, C
    PHYSICA B-CONDENSED MATTER, 2000, 289 : 546 - 549
  • [5] Titanium and titanium nitride contacts to n-type gallium nitride
    Luther, BP
    Mohney, SE
    Jackson, TN
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (11) : 1322 - 1327
  • [6] DX CENTERS IN N-TYPE GAAS UNDER HYDROSTATIC-PRESSURE
    ZEMAN, J
    ZIGONE, M
    MARTINEZ, G
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) : 635 - 638
  • [7] Emergence of deep levels in n-type ZnSe under hydrostatic pressure
    Ritter, TM
    Weinstein, BA
    Park, RM
    Tamargo, MC
    PHYSICAL REVIEW LETTERS, 1996, 76 (06) : 964 - 967
  • [8] Low temperature transport of n-type gallium nitride
    Chong, G
    Reed, MA
    Gaffey, B
    Gheriasmova, M
    Mitev, PH
    Guido, LJ
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 479 - 484
  • [9] Thermal annealing study of as-grown n-type MOCVD GaAs
    Naz, Nazir A.
    Qurashi, Umar S.
    Iqbal, M. Zafar
    PHYSICA B-CONDENSED MATTER, 2007, 401 : 242 - 245
  • [10] CRITICAL CRITERION FOR AXIAL MODELS OF DEFECTS IN AS-GROWN N-TYPE GAAS
    NOLTE, DD
    WALUKIEWICZ, W
    HALLER, EE
    PHYSICAL REVIEW B, 1987, 36 (17): : 9374 - 9377
12345