Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure

被引：76
|
作者：
Wetzel, C [1 ]
Walukiewicz, W [1 ]
Haller, EE [1 ]
Ager, J [1 ]
Grzegory, I [1 ]
Porowski, S [1 ]
Suski, T [1 ]
机构：
[1] POLISH ACAD SCI,UNIPRESS,PL-01142 WARSAW,POLAND
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.53.1322
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A quantitative study of the carrier localization in GaN under large hydrostatic pressure is presented using infrared reflection and Raman spectroscopy. The free-carrier concentration in as-grown n-type GaN crystals is determined optically from the phonon-plasmon-coupled mode and an analysis of the dielectric function. A strong decrease from 1x10(19) cm(-3) at ambient pressure to only 3x10(17) cm(-3) at a pressure of 27 GPa is observed. This free-carrier reduction is attributed to a strongly localized donor present at a concentration of 1x10(19) cm(-3) and it is in agreement with previous qualitative results. From our quantitative data we determine the position of the neutral-donor level to be 126(-5)(+20) meV below the conduction band at 27 GPa. We present a model for the pressure dependence of the localized defect and predict its neutral level at 0.40 +/- 0.10 eV above the conduction-band edge at ambient pressure.
引用
收藏
页码：1322 / 1326
页数：5
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