Carrier localization in gallium nitride

被引:0
|
作者
机构
[1] Wetzel, C.
[2] Walukiewicz, W.
[3] Haller, E.E.
[4] Ager III, J.W.
[5] Chen, A.
[6] Fischer, S.
[7] Yu, P.Y.
[8] Jeanloz, R.
[9] Grzegory, I.
[10] Porowski, S.
[11] Suski, T.
[12] Amano, H.
[13] Akasaki, I.
来源
Wetzel, C. | 1600年 / Trans Tech Publ, Zurich卷 / 196-201期
关键词
Semiconducting gallium compounds;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Femtosecond optical studies of carrier localization and recombination in III-Nitride semiconductors
    Wraback, M
    Garrett, GA
    Sampath, AV
    Collins, CJ
    Shen, H
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS VII, 2003, 4992 : 217 - 225
  • [42] Manganese impurity in boron nitride and gallium nitride
    Assali, LVC
    Machado, WVM
    Justo, JF
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 1047 - 1050
  • [43] Synthesis of gallium nitride nano-particles by ammonia nitridation of mixed β-gallium oxide and gallium nitride powders
    Kiyono, Hajime
    Matsuo, Yasuyuki
    Mise, Takuto
    Kobayashi, Kohei
    Alhussain, Hanan
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2020, 128 (10) : 665 - 669
  • [44] Occurrence of 'accidental' InN quantum dots in indium gallium nitride/gallium nitride heterostructures
    O'Donnell, KP
    Martin, RW
    White, ME
    Pereira, S
    Mosselmans, JFW
    Tobin, MJ
    Grandjean, N
    Damilano, B
    QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 2003, 737 : 13 - 17
  • [45] Gallium nitride nanotubes by the conversion of gallium oxide nanotubes
    Hu, JQ
    Bando, Y
    Golberg, D
    Liu, QL
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (30) : 3493 - 3497
  • [46] Nanocrystalline gallium nitride from gallium azide precursors
    Manz, AH
    Frank, AC
    Sussek, H
    Stowasser, F
    Fischer, RA
    SURFACE-CONTROLLED NANOSCALE MATERIALS FOR HIGH-ADDED-VALUE APPLICATIONS, 1998, 501 : 15 - 20
  • [47] Reaction mechanism for the ammonolysis of β-gallium oxide to gallium nitride
    Jung, Woo-Sik
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2013, 121 (1413) : 460 - 463
  • [48] Synthesis of gallium nitride by ammonia injection into gallium melt
    Shibata, M
    Furuya, T
    Sakaguchi, H
    Kuma, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 196 (01) : 47 - 52
  • [49] Gallium oxide buffer layers for gallium nitride epitaxy
    Korbutowicz, Ryszard
    Wnek, Jan
    Panachida, Pawel
    Serafinczuk, Jaroslaw
    Srnanek, Rudolf
    OPTICA APPLICATA, 2013, 43 (01) : 73 - 79
  • [50] Er diffusion into gallium nitride
    Chen, CC
    Ting, YS
    Lee, CC
    Chi, GC
    Chakraborty, P
    Chini, T
    Chuang, HW
    Tsang, JS
    Kuo, CT
    Tsai, WC
    Chen, SH
    Chyi, JI
    SOLID-STATE ELECTRONICS, 2003, 47 (03) : 529 - 531