Impurity effects on indium oxide electronic states

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R&D Kobe Steel Eng Reps | / 3卷 / 39-42期
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Aluminum - Carrier concentration - Doping (additives) - Electric conductivity of solids - Electron energy levels - Magnesium - Magnetron sputtering - Silicon;
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The electronic states of indium oxide (In2O3) doped with magnesium, aluminum or silicon were calculated by the molecular orbital method. The results showed that silicon acted as a donor and magnesium acted as acceptor. The carrier density of In2O3 doped with silicon obtained by the magnetron sputtering method increased in comparison with that of In2O3. The experimental results were in agreement with the calculated results qualitatively. The electronic resistivity of In2O3 doped with silicon decreased compared with that of In2O3.
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