Impurity effects on indium oxide electronic states

被引：0
|
作者：
机构：
来源：
R&D Kobe Steel Eng Reps | / 3卷 / 39-42期
关键词：
Aluminum - Carrier concentration - Doping (additives) - Electric conductivity of solids - Electron energy levels - Magnesium - Magnetron sputtering - Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electronic states of indium oxide (In2O3) doped with magnesium, aluminum or silicon were calculated by the molecular orbital method. The results showed that silicon acted as a donor and magnesium acted as acceptor. The carrier density of In2O3 doped with silicon obtained by the magnetron sputtering method increased in comparison with that of In2O3. The experimental results were in agreement with the calculated results qualitatively. The electronic resistivity of In2O3 doped with silicon decreased compared with that of In2O3.
引用
收藏
相关论文
共 50 条
  • [31] ELECTRONIC STATES OF IONIZED IMPURITY-PAIRS IN SILICON
    TAKEYAMA, K
    KAWAHITO, M
    OKAZAKI, M
    KIKUCHI, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (01) : 118 - &
  • [32] Electronic structure and impurity states in GaN quantum dots
    Pérez-Conde, J
    Bhattacharjee, AK
    SOLID STATE COMMUNICATIONS, 2005, 135 (08) : 496 - 499
  • [33] LOCALIZED ELECTRONIC STATES - NONLINEARITY VERSUS SINGLE IMPURITY
    FESSER, K
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (47) : 9347 - 9354
  • [34] Electronic structure of indium oxide using cluster calculations
    Tanaka, I
    Mizuno, M
    Adachi, H
    PHYSICAL REVIEW B, 1997, 56 (07): : 3536 - 3539
  • [35] NONLINEAR PRESSURE EFFECT ON ELECTRONIC DENSITY OF STATES OF INDIUM
    DUMMER, G
    PHYSICS LETTERS A, 1969, A 29 (06) : 311 - &
  • [36] THE LOW-LYING ELECTRONIC STATES OF INDIUM TRIMER
    FENG, PY
    BALASUBRAMANIAN, K
    CHEMICAL PHYSICS, 1989, 138 (01) : 89 - 98
  • [37] Structural, electronic and vibrational properties of indium oxide clusters
    Xu Mao-Jie
    Ni Yi
    Li Zhen-Qing
    Wang Sheng-Li
    Liu Xiao-Hui
    Dou Xiao-Ming
    CHINESE PHYSICS B, 2011, 20 (06)
  • [38] ON THEORY OF ELECTRONIC STATES AT DEEP LEVELS IN INDIUM ANTIMONIDE
    KOLESNIKOV, AA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1968, (12): : 142 - +
  • [39] Structural, electronic and vibrational properties of indium oxide clusters
    徐茂杰
    倪一
    李振庆
    王胜利
    柳效辉
    窦晓鸣
    Chinese Physics B, 2011, 20 (06) : 169 - 177
  • [40] Electronic and structural properties of the surfaces and interfaces of indium oxide
    Walsh, Aron
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
12345