Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam

被引：0

作者：

机构：

[1] Uedono, A.

[2] Suzuki, T.

[3] Nakamura, T.

来源：

Uedono, A. (uedono@ims.tsukuba.ac.jp) | 1600年 / American Institute of Physics Inc.卷 / 95期

关键词：

Annealing - Defects - Doppler effect - Electroplating - Grain boundaries - Grain growth - Grain size and shape - Positrons - Secondary ion mass spectrometry - Temperature - Tensile stress;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Positron annihilation was used to probe vacancy-type defects in electroplated Cu films. The observed increase in the S value was attributed to grain growth at room temperature and the resultant increase in the fraction of positrons annihilated inside grains. As such, the annihilation characteristic of positrons trapped by grain boundaries was close to that for plastically deformed Cu.

引用

共 50 条

[31] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation
Uedono, A.
Nakamori, H.
Narita, K.
Suzuki, J.
Wang, X.
Che, S. -B.
Ishitani, Y.
Yoshikawa, A.
Ishibashi, S.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (05)
[32] Vacancy-Type Defects in H+6%He Neutral Beam Irradiated WK Alloy Probed by Slow Positron Beam
Fu, Xinge
Zheng, Mingxiu
Liu, Xiang
Zhang, Peiyuan
Tian, Xuefen
He, Weidi
Deng, Aihong
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (03):
[33] Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
Uedono, Akira
Takashima, Shinya
Edo, Masaharu
Ueno, Katsunori
Matsuyama, Hideaki
Egger, Werner
Koschine, Toenjes
Hugenschmidt, Christoph
Dickmann, Marcel
Kojima, Kazunobu
Chichibu, Shigefusa F.
Ishibashi, Shoji
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (04):
[34] DEFECTS IN TIN FILMS PROBED BY MONOENERGETIC POSITRON BEAMS
UEDONO, A
NANAO, S
TANIGAWA, S
SUZUKI, R
OHDAIRA, T
MIKADO, T
ISHIBASHI, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10): : 5711 - 5716
[35] Defects in TiN films probed by monoenergetic positron beams
Uedono, Akira, 1600, JJAP, Minato-ku, Japan (34):
[36] OBSERVATION OF VACANCY TYPE DEFECTS IN GA-DOPED ZNSE USING A MONOENERGETIC POSITRON BEAM
MIYAJIMA, T
OKUYAMA, H
AKIMOTO, K
MORI, Y
WEI, L
TANIGAWA, S
APPLIED PHYSICS LETTERS, 1991, 59 (12) : 1482 - 1484
[37] Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation
Uedono, Akira
Takino, Junichi
Sumi, Tomoaki
Okayama, Yoshio
Imanishi, Masayuki
Ishibashi, Shoji
Mori, Yusuke
JOURNAL OF CRYSTAL GROWTH, 2021, 570
[38] Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation
Uedono, Akira
Imanishi, Masayuki
Imade, Mamoru
Yoshimura, Masashi
Ishibashi, Shoji
Sumiya, Masatomo
Mori, Yusuke
JOURNAL OF CRYSTAL GROWTH, 2017, 475 : 261 - 265
[39] Investigation of vacancy-type defects in P+-implanted 6H-SiC using monoenergetic positron beams
Uedono, A.
Ohshima, T.
Itoh, H.
Suzuki, R.
Ohdaira, T.
Tanigawa, Sh.
Aoki, Y.
Yoshikawa, M.
Nashiyama, I.
Mikado, T.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (5 A): : 2422 - 2429
[40] Investigation of vacancy-type defects in P+-implanted 6H-SiC using monoenergetic positron beams
Uedono, A
Ohshima, T
Itoh, H
Suzuki, R
Ohdaira, T
Tanigawa, S
Aoki, Y
Yoshikawa, M
Nashiyama, I
Mikado, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (5A): : 2422 - 2429

← 1 2 3 4 5 →