PROXIMITY EFFECT FOR OPTICAL PROJECTION LITHOGRAPHY.

被引：0
|
作者：
Czesnik, Miroslaw [1 ]
机构：
[1] Polish Acad of Sciences, Inst of, Electron Technology, Warsaw, Pol, Polish Acad of Sciences, Inst of Electron Technology, Warsaw, Pol
来源：
Electron Technology (Warsaw) | 1984年 / 16卷 / 1-4期
关键词：
INTEGRATED CIRCUIT MANUFACTURE - PHOTORESISTS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The paper presents experimental results indicating the occurrence of a proximity effect in optical projection lithography. A critical pattern size has been observed below which the image sizes of isolated lines and isolated spaces in the photoresist are distorted when compared with the images of larger isolated patterns.
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页码：81 / 83
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