Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

被引：0
|
作者：
Lee, P.F. [1 ]
Dai, J.Y. [1 ]
Wong, K.H. [1 ]
Chan, H.L.W. [1 ]
Choy, C.L. [1 ]
机构：
[1] Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong, Hong Kong
来源：
Journal of Applied Physics | 2003年 / 93卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：3665 / 3667
相关论文
共 50 条
  • [41] Atomic layer chemical vapor deposition (ALCVD) of Hf and Zr silicate and aluminate high-k gate dielectric for next generation nano devices
    Kim, WK
    Nam, WH
    Kim, SH
    Rhee, SW
    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 2005, 38 (08) : 578 - 587
  • [42] Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-k LaTiON gate dielectric
    Xu, H. X.
    Xu, J. P.
    Li, C. X.
    Chan, C. L.
    Lai, P. T.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (04): : 903 - 906
  • [43] Fabrication and characterization of pulsed laser deposited HfO2 films for high-k gate dielectric applications
    Zhu, J
    Li, YR
    Liu, ZG
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (20) : 2896 - 2900
  • [44] Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices
    Kim, Dong-Ok
    Hong, Hyo-Ki
    Seo, Dong-Bum
    Trung, Tran Nam
    Hwang, Chan-Cuk
    Lee, Zonghoon
    Kim, Eui-Tae
    CARBON, 2020, 158 : 513 - 518
  • [45] Ruthenium Modified Zr-Doped HfO2 High-k Thin Films with Low Equivalent Oxide Thickness
    Lin, Chen-Han
    Kuo, Yue
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (07) : G162 - G168
  • [46] Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs
    Derek W. Johnson
    Jung Hwan Yum
    Todd W. Hudnall
    Ryan M. Mushinski
    Christopher W. Bielawski
    John C. Roberts
    Wei-E Wang
    Sanjay K. Banerjee
    H. Rusty Harris
    Journal of Electronic Materials, 2014, 43 : 151 - 154
  • [47] Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs
    Johnson, Derek W.
    Yum, Jung Hwan
    Hudnall, Todd W.
    Mushinski, Ryan M.
    Bielawski, Christopher W.
    Roberts, John C.
    Wang, Wei-E
    Banerjee, Sanjay K.
    Harris, H. Rusty
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (01) : 151 - 154
  • [48] Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric
    Yu Ai-Fang
    Qi Qiong
    Jiang Peng
    Jiang Chao
    CHINESE PHYSICS LETTERS, 2009, 26 (07)
  • [49] Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si
    Dai, JY
    Lee, PF
    Wong, KH
    Chan, HLW
    Choy, CL
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) : 912 - 915
  • [50] Thermal stability and electrical properties of pulsed laser-deposited Hf-silicate thin films for high-k gate dielectric applications
    Zhu, J
    Liu, ZG
    Feng, Y
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (23) : 3051 - 3056
12345