Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

被引：0
|
作者：
Lee, P.F. [1 ]
Dai, J.Y. [1 ]
Wong, K.H. [1 ]
Chan, H.L.W. [1 ]
Choy, C.L. [1 ]
机构：
[1] Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong, Hong Kong
来源：
Journal of Applied Physics | 2003年 / 93卷 / 06期
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摘要：
(Edited Abstract)
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页码：3665 / 3667
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