High-rate deposition of hydrogenated amorphous silicon films and devices

被引：0
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作者：
Luft, Werner [1 ]
机构：
[1] Solar Energy Research Inst, United States
来源：
Applied physics communications | 1988年 / 8卷 / 04期
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摘要：
Semiconducting Silicon
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页码：239 / 298
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