High-Rate Deposition of Amorphous Silicon

被引：3
|
作者：
Budagyan B.G. [1 ]
Sherchenkov A.A. [1 ]
Berdnikov A.E. [2 ]
Chernomordik V.D. [2 ]
机构：
[1] Moscow Inst. of Electron. Eng., Zelenograd, Moscow oblast
[2] Institute of Microelectronics, Russian Academy of Sciences, Yaroslavl, 150007
来源：
Russian Microelectronics | 2000年 / 29卷 / 6期
关键词：
Silicon; Recombination; Surface State; Electron Device; Mass Production;
D O I：
10.1023/A:1026640119204
中图分类号：
学科分类号：
摘要：
A method for rapid deposition of amorphous silicon (a-Si) films in a low-frequency (55 kHz) glow discharge plasma is suggested. The structure and electrophysical properties of the films were investigated. It is shown that the use of the low-frequency discharge makes it possible to independently control the stability and concentration of recombination centers in a-Si. This fact, along with the possibility of fabricating heterostructures with a low density of surface states, makes this method promising for mass production of a-Si-based electron devices.
引用
收藏
页码：391 / 396
页数：5
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