n-type delta doped strained quantum well lasers for improved modulation bandwidth

被引:0
|
作者
Technion-Israel Inst of Technology, Haifa, Israel [1 ]
机构
来源
Appl Phys Lett | / 14卷 / 1787-1789期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] MAGNETOLUMINESCENCE OF N-TYPE ONE-SIDE-MODULATION-DOPED QUANTUM WELLS
    ORGONASI, J
    BRUM, JA
    DELALANDE, C
    BASTARD, G
    ROTGER, T
    MAAN, JC
    WEIMANN, G
    SCHLAPP, W
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 407 - 411
  • [32] A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure
    Zhang, Ruiying
    Zhou, Fan
    Bian, Jing
    Zhao, Lingjuan
    Jian, Shuisheng
    Yu, Siyuan
    Wang, Wei
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (03) : 283 - 286
  • [33] A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD
    Zhang, RY
    Wang, W
    Zhou, F
    Wang, BJ
    Wang, LF
    Bian, J
    Zhao, LJ
    Zhu, HL
    Jian, SS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (03) : 306 - 310
  • [34] Strain and quantum confinement energies in n-type modulation-doped lattice-mismatched InAsP quantum-well wires
    Hammersberg, J
    Notomi, M
    Weman, H
    Lundstrom, T
    Potemski, M
    Sugiura, H
    Okamoto, M
    Tamamura, T
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8456 - 8464
  • [35] QUANTUM CAPTURE LIMITED MODULATION BANDWIDTH OF QUANTUM-WELL, WIRE, AND DOT LASERS
    KAN, SC
    VASSILOVSKI, D
    WU, TC
    LAU, KY
    APPLIED PHYSICS LETTERS, 1993, 62 (19) : 2307 - 2309
  • [36] Strain and quantum confinement energies in n-type modulation-doped lattice-mismatched InAsP quantum-well wires
    Hammersberg, J.
    Notomi, M.
    Weman, H.
    Lundstroem, T.
    Potemski, M.
    Sugiura, H.
    Okamoto, M.
    Tamamura, T.
    (79):
  • [37] Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3 mu m n-type modulation-doped strained multiquantum well lasers
    Nakahara, K
    Uomi, K
    Tsuchiya, T
    Niwa, A
    ELECTRONICS LETTERS, 1996, 32 (13) : 1200 - 1202
  • [38] Quantum transport in n-type and p-type modulation-doped mercury telluride quantum wells
    Landwehr, G
    Gerschütz, J
    Oehling, S
    Pfeuffer-Jeschke, A
    Latussek, V
    Becker, CR
    PHYSICA E, 2000, 6 (1-4): : 713 - 717
  • [39] 2ND QUANTIZED STATE LASING AND GAIN SPECTRA MEASUREMENTS IN N-TYPE MODULATION-DOPED GAAS-ALGAAS QUANTUM-WELL LASERS
    KOHNKE, GE
    WICKS, GW
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (11) : 1941 - 1946
  • [40] MODULATION-DOPED GAINAS/GAINASP STRAINED MULTIPLE-QUANTUM-WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY
    MAWATARI, H
    IGA, R
    SUGIURA, H
    TOHMORI, Y
    YOSHIKUNI, Y
    APPLIED PHYSICS LETTERS, 1994, 65 (03) : 277 - 279