REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION OSCILLATIONS DURING MOLECULAR BEAM EPITAXIAL GROWTH OF ZnSe ON (001)GaAs.

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作者：

Yao, Takafumi ^{[1
]}

Taneda, Hirohito ^{[1
]}

Funaki, Mitsuyoshi ^{[1
]}

机构：

[1] Electrotechnical Lab, Sakura-mura, Jpn, Electrotechnical Lab, Sakura-mura, Jpn

来源：

| 1600年 / 25期

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[2] Reflection high energy electron diffraction intensity oscillations during the growth of ZnSe on GaAs(110) by molecular beam epitaxy
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[4] MORPHOLOGICAL MODEL OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING EPITAXIAL-GROWTH ON GAAS(001)
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[8] Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy
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[9] OBSERVATION OF INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON (111)B GAAS SUBSTRATES
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