GROWTH-STUDIES OF MOLECULAR-BEAM EPITAXIAL ZNSE USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS

被引：5

|

作者：

TURCO, FS

TAMARGO, MC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.344388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1695 / 1698

页数：4

相关论文

共 50 条

[1] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE ON (001)GAAS
YAO, T
TANEDA, H
FUNAKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L952 - L954
[2] INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH
SAKAMOTO, T
KAWAI, NJ
NAKAGAWA, T
OHTA, K
KOJIMA, T
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 617 - 619
[3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND MOLECULAR-BEAM EPITAXY
DOBSON, PJ
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (98): : 1 - 8
[4] MEASUREMENT OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON A ROTATING SUBSTRATE
TURNER, GW
ISLES, AJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1784 - 1786
[5] OBSERVATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH FROM DISILANE
MOKLER, SM
LIU, WK
OHTANI, N
JOYCE, BA
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2255 - 2257
[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS (111)A
FAHY, MR
SATO, K
JOYCE, BA
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (02) : 190 - 192
[7] SURFACE-DIFFUSION DURING MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
GAINES, JM
PONZONI, CA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 918 - 920
[8] GROWTH-MODEL FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION MEASUREMENTS
BEHR, T
LITZ, T
WAAG, A
LANDWEHR, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 156 (03) : 206 - 211
[9] IN-SITU CHARACTERIZATION OF II/VI MOLECULAR-BEAM EPITAXY GROWTH USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS
GAINES, JM
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 137 (1-2) : 187 - 194
[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS(110) FILMS
NEAVE, JH
ZHANG, J
ZHANG, XM
FAWCETT, PN
JOYCE, BA
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (07) : 753 - 755

← 1 2 3 4 5 →