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- [1] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE ON (001)GAASJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L952 - L954YAO, TTANEDA, HFUNAKI, M
- [2] INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTHAPPLIED PHYSICS LETTERS, 1985, 47 (06) : 617 - 619SAKAMOTO, TKAWAI, NJNAKAGAWA, TOHTA, KKOJIMA, T
- [3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND MOLECULAR-BEAM EPITAXYINSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (98): : 1 - 8DOBSON, PJ
- [4] MEASUREMENT OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON A ROTATING SUBSTRATEJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1784 - 1786TURNER, GWISLES, AJ
- [5] OBSERVATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH FROM DISILANEAPPLIED PHYSICS LETTERS, 1992, 60 (18) : 2255 - 2257MOKLER, SMLIU, WKOHTANI, NJOYCE, BA
- [6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS (111)AAPPLIED PHYSICS LETTERS, 1994, 64 (02) : 190 - 192FAHY, MRSATO, KJOYCE, BA
- [7] REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION OSCILLATIONS DURING MOLECULAR BEAM EPITAXIAL GROWTH OF ZnSe ON (001)GaAs.1600, (25):Yao, TakafumiTaneda, HirohitoFunaki, Mitsuyoshi
- [8] SURFACE-DIFFUSION DURING MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTIONJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 918 - 920GAINES, JMPONZONI, CA
- [9] GROWTH-MODEL FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION MEASUREMENTSJOURNAL OF CRYSTAL GROWTH, 1995, 156 (03) : 206 - 211BEHR, TLITZ, TWAAG, ALANDWEHR, G