DYNAMICS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON (111)B GAAS SUBSTRATES

被引：19
|
作者：
YEN, MY
HAAS, TW
机构：
[1] USAF,WRIGHT RES & DEV CTR,MAT LAB,WRIGHT PATTERSON AFB,OH 45433
[2] SYSTRAN CORP,DAYTON,OH 45432
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期
关键词：
D O I：
10.1063/1.102878
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have observed intensity oscillations in reflection high-energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.
引用
收藏
页码：2533 / 2535
页数：3
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