MOCVD growth of (100)-oriented CeO2 thin films on hydrogen-terminated Si(100) substrates

被引：0
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作者：
Ami, T. [1 ]
Suzuki, M. [1 ]
机构：
[1] SONY Corp Research Cent, Yokohama, Japan
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1998年 / B54卷 / 1-2期
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摘要：
23
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页码：84 / 91
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