GROWTH OF GaAs MULTIPLE LAYER EPITAXIAL BY V. P. E. METHOD.

被引：0

作者：

Ogasawara, Kazuto

Shibatomi, Akihiro

Dazai, Koichi

机构：

来源：

Fujitsu Scientific and Technical Journal | 1976年 / 12卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

Multiple layer epitaxial structures (hi-lo, lo-hi-lo) were sequentially grown using vapor phase epitaxial growth of GaAs in a nitrogen atmosphere. Varying the epitaxial doping concentration in the same run improves the crystal quality of the epitaxial layer at the interface region rather than interrupting the growth process between differently doped layers in separate runs.

引用

页码：97 / 105

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