GROWTH OF GaAs MULTIPLE LAYER EPITAXIAL BY V. P. E. METHOD.

Multiple layer epitaxial structures (hi-lo, lo-hi-lo) were sequentially grown using vapor phase epitaxial growth of GaAs in a nitrogen atmosphere. Varying the epitaxial doping concentration in the same run improves the crystal quality of the epitaxial layer at the interface region rather than interrupting the growth process between differently doped layers in separate runs.