Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors

被引：0

作者：

Chang, Wen-Lung ^{[1
]}

Pan, Hsi-Jen ^{[1
]}

Wang, Wei-Chou ^{[1
]}

Thei, Kong-Beng ^{[1
]}

Cheng, Shiou-Ying ^{[2
]}

Lour, Wen-Shiung ^{[3
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Taiwan

[2] Department of Electrical Engineering, Oriental Institute of Technology, Taiwan

[3] Department of Electrical Engineering, National Taiwan-Ocean University, 2 Peining Road, Taiwan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1999年 / 38卷 / 12 A期

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摘要：

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