Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors

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作者：
Chang, Wen-Lung [1 ]
Pan, Hsi-Jen [1 ]
Wang, Wei-Chou [1 ]
Thei, Kong-Beng [1 ]
Cheng, Shiou-Ying [2 ]
Lour, Wen-Shiung [3 ]
Liu, Wen-Chau [1 ]
机构：
[1] Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Taiwan
[2] Department of Electrical Engineering, Oriental Institute of Technology, Taiwan
[3] Department of Electrical Engineering, National Taiwan-Ocean University, 2 Peining Road, Taiwan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1999年 / 38卷 / 12 A期
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