High-performance InGaP/InxGa1-xAs HEMT with an inverted delta-doped V-shaped channel structure

This letter reports a new and high-performance InGaP/InxGa1-xAs high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/InxGa1-xAs structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1 x 100 mu m(2)) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at V-GS = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.