InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE

被引:0
|
作者
Bosacchi, A. [1 ]
Frigeri, P. [1 ]
Franchi, S. [1 ]
Allegri, P. [1 ]
Avanzini, V. [1 ]
机构
[1] CNR-MASPEC Inst, Parma, Italy
来源
Journal of Crystal Growth | 1997年 / 175-176卷 / pt 2期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:771 / 776
相关论文
共 50 条
  • [41] Stacked InAs self-assembled quantum dots on (001)GaAs grown by molecular beam epitaxy
    Sugiyama, Y
    Nakata, Y
    Imamura, K
    Muto, S
    Yokoyama, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1320 - 1324
  • [42] Regular array formation of self-assembled InAs dots grown on patterned (111)B GaAs substrate by MBE
    Saitoh, T
    Tanimura, A
    Yoh, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1370 - 1374
  • [43] Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) A substrate
    Jiang, WH
    Xu, HZ
    Gong, Q
    Xu, B
    Wang, JZ
    Zhou, W
    Liang, JB
    Wang, ZG
    ACTA PHYSICA SINICA, 1999, 48 (08) : 1541 - 1546
  • [44] Optical characterisation of self organized InAs/GaAs quantum dots grown by MBE
    Hjiri, M
    Hassen, F
    Maaref, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 74 (1-3): : 253 - 258
  • [45] Vertically stacked quantum dots grown by ALMBE and MBE
    Frigeri, P
    Bosacchi, A
    Franchi, S
    Allegri, P
    Avanzini, V
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1136 - 1138
  • [46] Self-Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies
    Jennings, Cameron
    Ma, Xiangyu
    Wickramasinghe, Thushan
    Doty, Matthew
    Scheibner, Michael
    Stinaff, Eric
    Ware, Morgan
    ADVANCED QUANTUM TECHNOLOGIES, 2020, 3 (02)
  • [47] Characteristic study of InAs self-assembled quantum dots on GaAs/InP
    Yin, JZ
    Wang, XQ
    Yin, ZY
    Li, ZT
    Li, MT
    Qu, Y
    Du, GT
    Yang, SR
    APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 438 - 444
  • [48] Effects of GaAs on photoluminescence properties of self-assembled InAs quantum dots
    Wang, XQ
    Zhang, YJ
    Du, GT
    Li, XJ
    Yin, JZ
    Chen, WY
    Yang, SR
    CHINESE PHYSICS LETTERS, 2001, 18 (04) : 579 - 581
  • [49] Transient linear dichroism in InAs/GaAs self-assembled quantum dots
    Tribollet, J
    Maingault, L
    Lemaître, A
    Sermage, B
    Gérard, JM
    Bernardot, F
    Testelin, C
    Chamarro, M
    8TH CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS-8), 2004, : 585 - 588
  • [50] Intersublevel polaron laser with InAs/GaAs self-assembled quantum dots
    Sauvage, S
    Boucaud, P
    APPLIED PHYSICS LETTERS, 2006, 88 (06)