ELECTRODEPOSITION OF COBALT MODIFIED WITH SILICON.

被引：0
|
作者：
Kuznetsova, E.V. [1 ]
Sadakov, G.A. [1 ]
机构：
[1] A. M. Gor'kii State Univ, Perm, USSR, A. M. Gor'kii State Univ, Perm, USSR
来源：
Journal of applied chemistry of the USSR | 1986年 / 59卷 / 12 pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
COBALT SILICON ALLOYS
引用
收藏
页码：2487 / 2489
相关论文
共 50 条
  • [31] Low Valent Silicon.
    Stalke, Dietmar
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2012, 68 : S116 - S116
  • [32] Electrodeposition of Co + Ni alloys on modified silicon substrates
    E. Gómez
    E. Vallés
    Journal of Applied Electrochemistry, 1999, 29 (7) : 803 - 810
  • [33] Chemistry of gate dielectrics on silicon.
    Garfunkel, E
    Lu, HC
    Gustafsson, T
    Green, M
    Alers, G
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U463 - U463
  • [34] FORMATION OF SUBMICRON GROOVES IN SILICON.
    Riseman, J.
    1600, (26):
  • [35] RECTILINEAR DISLOCATION PHOTOLUMINESCENCE FOR SILICON.
    Sauer, R.
    Kisielowski-Kemmerich, C.
    Alexander, H.
    1600, (51):
  • [36] PHOSPHORUS DIFFUSION IN POLYCRYSTALLINE SILICON.
    Losee, D.L.
    Lavine, J.P.
    Trabka, E.A.
    Lee, S.-T.
    Jarman, C.M.
    1600, (55):
  • [37] ON THE PRODUCTION OF DIFFUSED LAYERS IN SILICON.
    Sharma, R.S.
    1973, 19 (02): : 63 - 71
  • [38] Dibenzyl and diphenyl silicole and silicon.
    Martin, G
    BERICHTE DER DEUTSCHEN CHEMISCHEN GESELLSCHAFT, 1912, 45 : 403 - 409
  • [39] Transport and confinement in silicon nanocrystals and porous silicon.
    Brus, LE
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1996, 211 : 105 - PHYS
  • [40] BEHAVIOR OF POTASSIUM IMPLANTED IN SILICON.
    Korol', V.M.
    Zastavnyi, A.V.
    1600, (11):
12345