FORMATION OF SUBMICRON GROOVES IN SILICON.

被引:0
|
作者
Riseman, J.
机构
来源
| 1600年 / 26期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
INTEGRATED CIRCUITS
引用
收藏
相关论文
共 50 条
  • [1] Effect of Germanium on the Formation of Thermodonors in Silicon.
    Dashevskii, M.Ya.
    Dokuchaeva, A.A.
    Anisimov, K.I.
    Neorganiceskie materialy, 1986, 22 (10): : 1599 - 1601
  • [2] Effect of the Growth Rate on the Formation of Microdefects in Silicon.
    Gulyaeva, A.S.
    Lainer, L.V.
    Pervova, O.A.
    Remizov, O.A.
    Slobodova, S.U.
    1600,
  • [3] Enthalpy of Formation of Liquid Alloys of Aluminum with Silicon.
    Gizenko, N.V.
    Emlin, B.I.
    Kilesso, S.N.
    Gasik, M.I.
    Zav'yalov, A.L.
    1600,
  • [4] SUBMICRON CHANNEL MOSFET USING FOCUSED BORON ION BEAM IMPLANTATION INTO SILICON.
    Shukuri, Shoji
    Wada, Yasuo
    Masuda, Hiroo
    Ishitani, Tohru
    Tamura, Masao
    1600, (23):
  • [5] ROLE OF INTERSTITIAL ATOMS IN FORMATION OF RADIATION DEFECTS IN SILICON.
    Litvinko, A.G.
    Murin, L.I.
    Tkachev, V.D.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 644 - 647
  • [6] Enhanced formation and junction properties of polypyrrole films on silicon.
    Laibinis, PE
    Kim, NY
    Vermeir, IE
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 217 : U97 - U97
  • [7] The measurement of silicon.
    Duval, C
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1944, 218 : 198 - 199
  • [8] AMORPHOUS SILICON.
    Morigaki, K.
    Nitta, S.
    1987, : 53 - 96
  • [9] GaAs ON SILICON.
    Singer, Peter H.
    Semiconductor International, 1987, 10 (05) : 71 - 75
  • [10] PASSIVATION IN SILICON.
    Corbett, J.W.
    Lindstrom, J.L.
    Pearton, S.J.
    Tavendale, A.J.
    Solar Cells, 1987, 24 (1-2): : 127 - 133