FORMATION OF SUBMICRON GROOVES IN SILICON.

被引:0
|
作者
Riseman, J.
机构
来源
| 1600年 / 26期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
INTEGRATED CIRCUITS
引用
收藏
相关论文
共 50 条
  • [21] The alloys of aluminium and silicon.
    不详
    NATURE, 1926, 118 : 498 - 499
  • [22] ON THE THERMAL DONORS IN SILICON.
    Corbett, James W.
    Frisch, Harry L.
    Snyder, Lawrence C.
    Materials Letters, 1984, 2 (03) : 209 - 210
  • [23] Metallurgical Grade Silicon.
    Renno Gomes, Mario
    Metalurgia ABM, 1983, 39 (312): : 617 - 621
  • [24] AUGER RECOMBINATION IN SILICON.
    Abakumov, V.N.
    Yassievich, I.N.
    1977, 11 (07): : 766 - 771
  • [25] METALLURGY OF OXYGEN IN SILICON.
    Mikkelsen Jr., J.C.
    Journal of Metals, 1985, 37 (05): : 51 - 54
  • [26] On precipitated amorphous silicon.
    Braesco, P
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1919, 168 : 343 - 345
  • [27] Formation of regular arrays of submicron GaAs dots on silicon
    Beach, JD
    Veauvy, C
    Caputo, R
    Collins, RT
    Khandekar, AA
    Kuech, TF
    Inoki, CK
    Kuan, TS
    Hollingsworth, RE
    APPLIED PHYSICS LETTERS, 2004, 84 (26) : 5323 - 5325
  • [28] Note on the Spectrum of Silicon.
    Exner, F
    Haschek, E
    ASTROPHYSICAL JOURNAL, 1900, 12 (01): : 48 - 49
  • [29] THERMAL EXPANSION OF SILICON.
    Keppler, Ulrich
    Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques, 1988, 79 (03): : 157 - 158
  • [30] Electrical conductivity of silicon.
    Seemann, HJ
    PHYSIKALISCHE ZEITSCHRIFT, 1927, 28 : 765 - 766