Switching performance of high rate deposition processing a-Si:H TFTs

被引：0
|
作者：
Toshiba Corp, Yokohama, Japan [1 ]
机构：
来源：
J Non Cryst Solids | / pt 2卷 / 1137-1140期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [31] Effect of Anneal Time on the Enhanced Performance of a-Si:H TFTs for Future Display Technology
    Indluru, A.
    Venugopal, S. M.
    Allee, D. R.
    Alford, T. L.
    JOURNAL OF DISPLAY TECHNOLOGY, 2011, 7 (06): : 306 - 310
  • [32] A Novel Technology for a-Si TFTs with High Aperture Ratio
    Lo, Wan-Yu
    Chen, Maw-Song
    Huang, Wei-Ming
    IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2011, : 179 - 180
  • [33] New pixel driving scheme based a-Si:H TFTs by eliminating the switching TFTs in the OLED current path for low power consumption
    Shin, Hee-Sun
    Lee, Jae-Hoon
    Shin, Kwang-Sub
    Han, Min-Koo
    IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, 2005, : 657 - 660
  • [34] Low temperature and High deposition rate fabricating a-Si: H thin films and solar cells
    Ni, Jian
    Zhang, Jian-Jun
    Wang, Xian-Bao
    Li, Lin-Na
    Hou, Guo-Fu
    Sun, Jian
    Geng, Xin-Hua
    Zhao, Ying
    Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2010, 21 (02): : 217 - 221
  • [35] High-rate growth of stable a-Si:H
    Takagi, T.
    Hayashi, R.
    Payne, A.
    Futako, W.
    Nishimoto, T.
    Takai, M.
    Kondo, M.
    Matsuda, A.
    Materials Research Society Symposium - Proceedings, 1999, 557 : 105 - 114
  • [36] HIGH-RATE DEPOSITION OF A-SI - H FILM USING THE DECOMPOSITION OF MONO-SILANE
    NAKAYAMA, Y
    NATSUHARA, T
    NAGASAWA, N
    KAWAMURA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10): : L604 - L606
  • [37] High-rate growth of stable a-Si:H
    Takagi, T
    Hayashi, R
    Payne, A
    Futako, W
    Nishimoto, T
    Takai, M
    Kondo, M
    Matsuda, A
    AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 105 - 114
  • [38] The application of low-frequency glow discharge to high-rate deposition of a-Si:H
    Budaguan, BG
    Popov, AA
    Sazonov, AY
    Bosyakov, MN
    Grunsky, DI
    Zhuk, DW
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 39 - 42
  • [39] HIGH-RATE DEPOSITION OF a-Si:H FILM WITH A SEPARATED PLASMA TRIODE METHOD.
    Tanaka, Makoto
    Ninomiya, Kunimoto
    Nakamura, Noboru
    Tsuda, Shinya
    Nakano, Shoichi
    Ohnishi, Michitoshi
    Kuwano, Yukinori
    1600, (27):
  • [40] The application of low-frequency glow discharge to high-rate a-Si:H deposition
    Budaguan, BG
    Sazonov, AY
    Aivazov, AA
    Berdnikov, AE
    Popov, AA
    CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 643 - 646
12345