共 50 条
- [41] Effect of biaxial strain on the band gap of wurtzite AlxGa1−xN Applied Physics A, 2012, 106 : 1013 - 1016
- [43] COMPOSITION DEPENDENCE OF THE LATTICE CONSTANT OF Ge2x(GaAs)1 - x SOLID SOLUTIONS. Soviet physics. Semiconductors, 1982, 16 (11): : 1298 - 1300
- [45] DEPENDENCE OF THE FORBIDDEN ENERGY GAP WIDTH OF THE COMPOUND INPXAS1-X ON COMPOSITION SOVIET PHYSICS-SOLID STATE, 1963, 5 (03): : 699 - 700
- [46] ALXGA1-XAS BAND-EDGE DEPENDENCE ON ALLOY COMPOSITION PHYSICAL REVIEW B, 1989, 40 (09): : 6417 - 6419
- [47] ALXGA1-SB SURFACE-BARRIER STRUCTURES .2. DEPENDENCE OF THE BARRIER HEIGHT ON FORBIDDEN ZONE WIDTH OF SOLID-SOLUTION IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1979, (06): : 26 - 31
- [48] NATURE OF CHANGE IN FORBIDDEN-BAND WIDTH IN SUBSTITUTIONAL SOLID-SOLUTIONS BASED ON LEAD CHALCOGENIDES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 259 - 259
- [49] DETERMINATION OF FORBIDDEN BAND WIDTH OF GE-SI SOLID-SOLUTIONS AT HIGH-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2093 - &
- [50] DEPENDENCE OF THE FORBIDDEN-BAND WIDTH OF SEMICONDUCTING FILMS ON THEIR THICKNESS AND TEMPERATURE SOVIET PHYSICS JETP-USSR, 1963, 16 (06): : 1630 - 1631