MICROSCOPIC SOLID INHOMOGENEITIES IN ALXGA1-XSB BULK CRYSTALS GROWN FROM METALLIC SOLUTIONS

被引:6
|
作者
BISCHOPINK, G
BENZ, KW
机构
[1] Kristallographisches Institut, Universität Freiburg, D- W-7800 Freiburg
关键词
D O I
10.1016/0022-0248(93)90834-J
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In AlxGa1-xSb crystals grown by the travelling heater method (THM), spatially resolved photoluminescence and cathodoluminescence measurements were carried out at 77 and 20 K, respectively, to detect the AlSb distribution at convective type I and kinetic type II striations (resolution about 4 mum in diameter). The AlSb microscopic segregation effects in the riser area of type II striations can be explained with the non-steady-state step exchange model.
引用
收藏
页码:45 / 50
页数:6
相关论文
共 50 条
  • [1] THM GROWTH OF ALXGA1-XSB BULK CRYSTALS
    BISCHOPINK, G
    BENZ, KW
    JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 470 - 474
  • [2] GROWTH OF ALXGA1-XSB BULK MATERIAL FROM METALLIC SOLUTION
    BISCHOPINK, G
    BENZ, KW
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 465 - 472
  • [3] CRYSTALLIZATION OF ALXGA1-XSB SOLUTIONS
    ELYUKHIN, VA
    KARPOV, SY
    PORTNOI, EL
    SKVORTSOV, AM
    SOROKINA, LP
    ZHURNAL TEKHNICHESKOI FIZIKI, 1980, 50 (04): : 888 - 890
  • [4] Microscopic model of impact ionization in AlxGa1-xSb
    Grein, CH
    Ehrenreich, H
    PHOTODETECTORS: MATERIALS AND DEVICES V, 2000, 3948 : 200 - 205
  • [5] AlxGa1-xSb Crystals Grown by a Modified Stepanov Technique with an Ultrasonic Effect
    Kozhemyakin, G. N.
    CRYSTAL GROWTH & DESIGN, 2019, 19 (05) : 2615 - 2620
  • [6] Structural characterization of AlxGa1-xSb grown by LPE
    Juarez Diaz, G.
    Diaz-Reyes, J.
    Martinez-Juarez, J.
    Galvan-Arellano, M.
    Balderas-Lopez, J. A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (05) : 472 - 479
  • [7] OPTICAL AND ELECTRICAL CHARACTERIZATION OF ALXGA1-XSB CRYSTALS GROWN BY THE TRAVELING HEATER METHOD
    MEYER, BK
    BISCHOPINK, G
    BENZ, KW
    SCHONER, A
    PENSL, G
    JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 475 - 478
  • [8] Vertical Bridgman growth of AlxGa1-xSb single crystals
    Huang, WD
    Naritsuka, S
    Nishinaga, T
    JOURNAL OF CRYSTAL GROWTH, 2000, 213 (3-4) : 207 - 213
  • [9] ELECTROCHEMICAL NICKEL AND PALLADIUM DEPOSITION ONTO ALXGA1-XSB SOLID-SOLUTIONS
    ARBUZOVA, GK
    MAKSIMOVA, NK
    SOVIET ELECTROCHEMISTRY, 1979, 15 (07): : 911 - 914
  • [10] GROWTH OF EPITAXIAL LAYERS OF SOLID-SOLUTIONS ALXGA1-XSB FROM LIQUID-PHASE
    VILISOV, AA
    VYATKIN, AP
    GERMOGENOV, VP
    INORGANIC MATERIALS, 1976, 12 (09) : 1251 - 1255