Atomic topography change of SiO2/Si interfaces during thermal oxidation

被引：0
|
作者：
Hojo, Daisuke [1 ]
Tokuda, Norio [1 ]
Yamabe, Kikuo [1 ]
机构：
[1] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2002年 / 41卷 / 05期
关键词：
Atomic topography change - Root mean square - Silicon surface - Step structure - Terrace structure;
D O I：
10.1143/jjap.41.l505
中图分类号：
学科分类号：
摘要：
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