Atomic topography change of SiO2/Si interfaces during thermal oxidation

被引：0
|
作者：
Hojo, Daisuke [1 ]
Tokuda, Norio [1 ]
Yamabe, Kikuo [1 ]
机构：
[1] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2002年 / 41卷 / 05期
关键词：
Atomic topography change - Root mean square - Silicon surface - Step structure - Terrace structure;
D O I：
10.1143/jjap.41.l505
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Optical anisotropy change of buried SiO2/Si interfaces during layer-by-layer oxidation
    Nakayama, T
    Murayama, M
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 461 - 462
  • [12] Roughness at Si/SiO2 interfaces and silicon oxidation
    Chen, XD
    Gibson, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04): : 1269 - 1274
  • [13] Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO2/Si(001) Interfaces during Thermal Oxidation
    Ogawa, Shuichi
    Tang, Jiayi
    Yoshigoe, Akitaka
    Ishidzuka, Shinji
    Teraoka, Yuden
    Takakuwa, Yuji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
  • [14] Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO2 interfaces and their incorporation into SiO2
    Takahashi, Norihiko
    Yamasaki, Takahiro
    Kaneta, Chioko
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (22)
  • [15] The evolution of (001) Si/SiO2 interface roughness during thermal oxidation
    Fang, SJ
    Chen, W
    Yamanaka, T
    Helms, CR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) : 2886 - 2893
  • [16] ATOMIC-SCALE PLANARIZATION OF SIO2/SI(001) INTERFACES
    NIWA, M
    UDAGAWA, M
    OKADA, K
    KOUZAZKI, T
    SINCLAIR, R
    APPLIED PHYSICS LETTERS, 1993, 63 (05) : 675 - 677
  • [17] Enhancement of SiO2/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation
    Ogawa, Shuichi
    Tang, Jiayi
    Yoshigoe, Akitaka
    Ishidzuka, Shinji
    Takakuwa, Yuji
    JOURNAL OF CHEMICAL PHYSICS, 2016, 145 (11):
  • [18] SIO2 FILM STRESS-DISTRIBUTION DURING THERMAL-OXIDATION OF SI
    KOBEDA, E
    IRENE, EA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 574 - 578
  • [19] PRECIPITATION AND SEGREGATION OF SB AT SI-SIO2 INTERFACES DURING THERMAL-OXIDATION
    WILLIAMS, JS
    PETRAVIC, M
    LI, YH
    DAVIES, JA
    PALMER, GR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4): : 156 - 159
  • [20] Stress in the SiO2/Si structures formed by thermal oxidation
    Szekeres, A
    FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, 1998, 47 : 65 - 78
12345