Atomic topography change of SiO2/Si interfaces during thermal oxidation

被引：0
|
作者：
Hojo, Daisuke [1 ]
Tokuda, Norio [1 ]
Yamabe, Kikuo [1 ]
机构：
[1] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2002年 / 41卷 / 05期
关键词：
Atomic topography change - Root mean square - Silicon surface - Step structure - Terrace structure;
D O I：
10.1143/jjap.41.l505
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Atomic topography change of SiO2/Si interfaces during thermal oxidation
    Hojo, D
    Tokuda, N
    Yamabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (5A): : L505 - L508
  • [2] SiO2 surface and SiO2/Si interface topography change by thermal oxidation
    Tokuda, N.
    Murata, M.
    Hojo, D.
    Yamabe, K.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (08): : 4763 - 4768
  • [3] SiO2 surface and SiO2/Si interface topography change by thermal oxidation
    Tokuda, N
    Murata, M
    Hojo, D
    Yamabe, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (08): : 4763 - 4768
  • [4] Topography change due to multilayer oxidation at SiO2/Si(111) interfaces
    Hojo, Daisuke
    Oeda, Hitoshi
    Tokuda, Norio
    Yamabe, Kikuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (4 B): : 1903 - 1906
  • [5] Topography change due to multilayer oxidation at SiO2/Si(111) interfaces
    Hojo, D
    Oeda, H
    Tokuda, N
    Yamabe, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 1903 - 1906
  • [6] Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace
    Appl Phys Lett, 14 (1715):
  • [7] Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace
    Miyata, N
    Watanabe, H
    Ichikawa, M
    APPLIED PHYSICS LETTERS, 1998, 72 (14) : 1715 - 1717
  • [8] Stress dependence of oxidation reaction at SiO2/Si interfaces during silicon thermal oxidation
    Akiyama, Toru
    Kageshima, Hiroyuki
    Uematsu, Masashi
    Ito, Tomonori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (09) : 7089 - 7093
  • [9] Atomic structure of SiO2 at SiO2/Si interfaces
    Hirose, K
    Nohira, H
    Sakano, K
    Hattori, T
    APPLIED SURFACE SCIENCE, 2000, 166 (1-4) : 455 - 459
  • [10] Generation of excess Si species at Si/SiO2 interface and their diffusion into SiO2 during Si thermal oxidation
    Ibano, Kenzo
    Itoh, Kohei M.
    Uematsua, Masashi
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (02)
12345