INDIUM ISOELECTRONIC DOPING INFLUENCE ON ETCH PIT DENSITY IN GaAs LAYERS GROWN BY VAPOUR PHASE EPITAXY.

被引：0
|
作者：
Lopez Coronado, M. [1 ]
Abril, E.J. [1 ]
Aguilar, M. [1 ]
机构：
[1] UPM, Madrid, Spain, UPM, Madrid, Spain
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1986年 / 25卷 / 11期
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摘要：
7
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页码：899 / 901
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