INDIUM ISOELECTRONIC DOPING INFLUENCE ON ETCH PIT DENSITY IN GaAs LAYERS GROWN BY VAPOUR PHASE EPITAXY.

被引：0
|
作者：
Lopez Coronado, M. [1 ]
Abril, E.J. [1 ]
Aguilar, M. [1 ]
机构：
[1] UPM, Madrid, Spain, UPM, Madrid, Spain
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1986年 / 25卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
7
引用
收藏
页码：899 / 901
相关论文
共 50 条
  • [21] REDUCTION OF DEEP LEVEL CONCENTRATIONS IN GaAs LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY.
    Makimoto, Toshiki
    Yamauchi, Yoshiharu
    Horikoshi, Yoshiji
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (02): : 152 - 154
  • [22] INDIUM DOPING OF N-TYPE HGCDTE LAYERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    GHANDHI, SK
    TASKAR, NR
    PARAT, KK
    BHAT, IB
    APPLIED PHYSICS LETTERS, 1990, 57 (03) : 252 - 254
  • [23] OPTICAL AND ELECTROOPTICAL ANALYSIS OF GaAs INVERTED RIB PHASE MODULATORS GROWN BY VAPOR PHASE EPITAXY.
    Erman, Marko
    Vodjdani, Nakita
    Jarry, Philippe
    Graziani, David
    Pinhas, Hanni
    1600, (LT-4):
  • [24] Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy
    Seong, TY
    Lee, SM
    Lee, RT
    Stringfellow, GB
    SURFACE SCIENCE, 2000, 457 (1-2) : L381 - L385
  • [25] Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density
    Koleske, D. D.
    Figiel, J. J.
    Alliman, D. L.
    Gunning, B. P.
    Kempisty, J. M.
    Creighton, J. R.
    Mishima, A.
    Ikenaga, K.
    APPLIED PHYSICS LETTERS, 2017, 110 (23)
  • [26] Boron doping of silicon layers grown by liquid phase epitaxy
    McCann, MJ
    Weber, KJ
    Petravic, M
    Blakers, AW
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 45 - 50
  • [27] Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy
    Teisseyre, H
    Leszczynski, M
    Suski, T
    Grzegory, I
    Bockowski, M
    Jun, J
    Porowski, S
    Pakula, K
    Robert, JL
    Beaumont, B
    Gibart, P
    Vaille, M
    Faurie, JP
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (02) : 240 - 243
  • [28] Homoepitaxial layers of gallium nitride grown by metallorganic vapour phase epitaxy
    High Pressure Research Cent Polish, Acad of Sciences, Warsaw, Poland
    Semicond Sci Technol, 2 (240-243):
  • [29] Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman
    Martínez, O
    Avella, M
    de la Puente, E
    Jiménez, J
    Gérard, B
    Gil-Lafon, E
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (1-3) : 198 - 202
  • [30] STRUCTURE OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY
    GROBE, E
    SALOW, H
    ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1972, 32 (5-6): : 381 - &
12345