4H-SiC MESFETs behavior after high dose irradiation

被引：0
|
作者：
Brisset, C. [1 ]
Noblanc, O. [1 ]
Picard, C. [1 ]
Joffre, F. [1 ]
Brylinski, C. [1 ]
机构：
[1] CEA-Saclay, Gif-sur-Yvette, France
来源：
IEEE Transactions on Nuclear Science | 2000年 / 47卷 / 3 I期
关键词：
Conductive materials - Dosimetry - Irradiation - MESFET devices - Semiconductor device structures - Semiconductor junctions - Silicon carbide - Substrates;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate.
引用
收藏
页码：598 / 603
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