Influence of native oxides on the reliability of ultrathin gate oxide

被引:0
|
作者
Takeda, Mikako [1 ]
Ohwaki, Takeshi [1 ]
Fujii, Hideo [1 ]
Kusumoto, Eisuke [1 ]
Kaihara, Yoshiyuki [1 ]
Takai, Yoshizo [1 ]
Shimizu, Ryuichi [1 ]
机构
[1] Kobe Steel Ltd, Kobe, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 02期
关键词
Experimental; (EXP);
D O I
暂无
中图分类号
学科分类号
摘要
The influence of wet cleaning processes, such as the SC-1 and H2O2 processes, on the time dependent dielectric breakdown (TDDB) of ultrathin gate oxide was investigated. A large difference in the reliability by wet cleaning processes was observed, especially when an electrode is an anode. The reliability of the gate oxide by the H2O2 process was worse than SC-1. It was found by Fourier transformed infrared attenuated total reflection (FT-IR-ATR) analysis that the amount of structural imperfection of native oxides formed in H2O2 was larger than SC-1. Since stress-induced positive charges which affect the TDDB properties are generated near the anode- side oxide interface, a large amount of structural imperfection in the native oxides formed in H2O2 probably results in a defective thermal oxide surface, leading to an increase in the generation and trapping of positive charge.
引用
收藏
页码:397 / 401
相关论文
共 50 条
  • [41] The electronic structure at the atomic scale of ultrathin gate oxides
    D. A. Muller
    T. Sorsch
    S. Moccio
    F. H. Baumann
    K. Evans-Lutterodt
    G. Timp
    Nature, 1999, 399 : 758 - 761
  • [42] Characterization of plasma charging damage in ultrathin gate oxides
    Lin, HC
    Wang, MF
    Chen, CC
    Hsien, SK
    Chien, CH
    Huang, TY
    Chang, CY
    Chao, TS
    1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 312 - 317
  • [43] Physical models of boron diffusion in ultrathin gate oxides
    Fair, RB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) : 708 - 717
  • [44] Effect of initial Al contamination on ultrathin gate oxides
    Lim, SW
    Machuca, F
    Liao, HM
    Chiarello, RP
    Helms, RC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (03) : 1136 - 1140
  • [45] Conduction properties of breakdown paths in ultrathin gate oxides
    Miranda, E
    Suñé, J
    Rodríguez, R
    Nafría, M
    Aymerich, X
    MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) : 687 - 690
  • [46] Analysis of tunnel current through ultrathin gate oxides
    Fukuda, M
    Mizubayashi, W
    Kohno, A
    Miyazaki, S
    Hirose, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (12B): : L1534 - L1536
  • [47] Logistic modeling of progressive breakdown in ultrathin gate oxides
    Miranda, E
    Bandiera, L
    Cester, A
    Paccagnella, A
    ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 83 - 86
  • [48] Analysis of tunnel current through ultrathin gate oxides
    Fukuda, Masatoshi
    Mizubayashi, Wataru
    Kohno, Atsushi
    Miyazaki, Seiichi
    Hirose, Masataka
    Japanese Journal of Applied Physics, Part 2: Letters, 1998, 37 (12 B):
  • [49] Evaluation of plasma charging damage in ultrathin gate oxides
    Lin, HC
    Chen, CC
    Chien, CH
    Hsein, SK
    Wang, MF
    Chao, TS
    Huang, TY
    Chang, CY
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (03) : 68 - 70
  • [50] Reliability of gate oxides on silicon substrates with 5-10 nm oxide thickness
    Huber, A
    Grabmeier, J
    Lambert, U
    Wahlich, R
    PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 377 - 385