Analysis of tunnel current through ultrathin gate oxides

被引：52
|
作者：
Fukuda, M [1 ]
Mizubayashi, W [1 ]
Kohno, A [1 ]
Miyazaki, S [1 ]
Hirose, M [1 ]
机构：
[1] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 12B期
关键词：
tunnel current; gate oxide; Fowler-Nordheim tunneling; direct tunneling;
D O I：
10.1143/JJAP.37.L1534
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tunnel current through 1.27-8.12-nm-thick gate oxides has been calculated on the basis of multiple-scattering theory, in which the SiO(2) layer is segmented into multiple rectangular potential barriers. By using the conduction band barrier height of 3.34 eV determined for the SiO(2)/Si(100) interfaces, a tunneling effective mass of 0.35m(0) is obtained so as to reproduce the SiO(2) thickness dependence on the direct tunnel current. The Fowler-Nordheim tunnel current oscillation due to interference between the propagating electron wave at the SiO(2) conduction band and the wave reflected at the Sio(2)/Si interface has also been explained by employing an oxide conduction band effective mass of 0.60m(0.) It is found that the oxide thicknesses determined by ellipsometry are in good agreement with those extracted by fitting the measured tunnel current to theoretical one.
引用
收藏
页码：L1534 / L1536
页数：3
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