Structural properties of amorphous silicon produced by electron irradiation

被引:0
|
作者
Yamasaki, J. [1 ]
Takeda, S. [1 ]
机构
[1] Department of Physics, Graduate School of Science, Osaka University-Toyonaka, 1-16, Machikaneyama-cho, Toyonaka, Osaka 560-0043, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:231 / 236
相关论文
共 50 条
  • [31] REVERSIBLE STRUCTURAL-CHANGES IN DISCHARGE-PRODUCED AMORPHOUS-SILICON
    HONG, CS
    HWANG, HL
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4593 - 4597
  • [32] 18 MeV electron irradiation-induced metastability in hydrogenated amorphous silicon
    Danesh, P
    Pantchev, B
    Vlaikova, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 239 (04): : 370 - 374
  • [33] Irradiation of electron with high energy induced micro-crystallization of amorphous silicon
    Zhong, Y.L.
    Huang, J.K.
    Liu, W.P.
    Li, J.N.
    2001, Shanghai Science and Technology Press (19):
  • [34] Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC
    Klaver, A
    Warman, JM
    de Haas, MP
    Metselaar, JW
    van Swaaij, RACMM
    AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 165 - 170
  • [35] ELECTRON-IRRADIATION EFFECTS ON AMORPHOUS-SILICON SOLAR-CELLS
    KATAYAMA, M
    MORIMOTO, H
    SUGAWARA, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (01): : K5 - K8
  • [36] STRUCTURAL-CHANGES AND CRYSTALLIZATION OF AMORPHOUS HYDROGENATED SILICON GENERATED BY LASER IRRADIATION
    ABDULHALIM, I
    BESERMAN, R
    WEIL, R
    PHYSICAL REVIEW B, 1989, 39 (02): : 1081 - 1091
  • [37] Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon
    Danesh, P.
    Pantchev, B.
    Wiezorek, J.
    Schmidt, B.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (17-18): : 2660 - 2665
  • [38] Electron density analysis of plasma produced by laser irradiation of silicon nitride ceramics
    Cai, Pengcheng
    Li, Shuang
    Cai, Hong-Xing
    ELEVENTH INTERNATIONAL CONFERENCE ON INFORMATION OPTICS AND PHOTONICS (CIOP 2019), 2019, 11209
  • [39] On optical, electrical and structural properties of amorphous silicon based semiconductors
    Pincík, E
    Kobayashi, H
    Mullerová, J
    Gmucová, K
    Jergel, M
    Brunner, R
    Zeman, M
    Zahoran, M
    ACTA PHYSICA SLOVACA, 2003, 53 (04) : 267 - 278
  • [40] STRUCTURAL ORDER AND OPTICAL-PROPERTIES OF AMORPHOUS-SILICON
    SOKOLOV, AP
    SHEBANIN, AP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (06): : 720 - 722