METAL SILICIDES WITH ENERGETIC PULSES.

被引：0
|
作者：
D'Anna, E. [1 ]
Leggieri, G. [1 ]
Luches, A. [1 ]
Majni, G. [1 ]
Nava, F. [1 ]
Ottaviani, G. [1 ]
机构：
[1] Univ of Lecce, Lecce, Italy, Univ of Lecce, Lecce, Italy
来源：
Applied Physics A: Solids and Surfaces | 1986年 / A40卷 / 03期
关键词：
CHEMICAL REACTIONS - Reaction Kinetics - ELECTRON BEAMS - Applications - HEAT TREATMENT - Annealing - INTERMETALLICS - LASER BEAMS - Applications;
D O I：
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学科分类号：
摘要：
Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that silicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.
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页码：183 / 190
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