Fabrication of WSix micron structures using RIE in SF6-N2 mixture

被引：0

作者：

机构：

[1] Cheng, Meiqiao

[2] Fu, Shaoyun

[3] Li, Jianzhon

来源：

Cheng, Meiqiao | 1600年 / 11期

关键词：

Semiconducting Gallium Arsenide - Semiconductor Device Manufacture--Etching - Silicon Compounds - Tungsten Compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper reports experiments on reactive ion etching of WSix using SF6-Ar and SF6-N2 as etchants. Etching characteristics are well studied with SF6-N2 system. N2 is found to be superior as a diluent of SF6 in etching micrometer structures of WSix, and having good repeatability. GaAs MESFET and OEIC devices have been fabricated with the aid of etching.

引用

共 50 条

[31] Rotational influence on multiphoton absorption efficiency in SF6-N2 mixtures
Markushev, DD
Rabasovic, M
Terzic, M
Jovanovic-Kurepa, J
JOURNAL DE PHYSIQUE IV, 2005, 125 : 23 - 25
[32] TRANSPORT-COEFFICIENTS IN ARC PLASMA OF SF6-N2 MIXTURES
GLEIZES, A
RAZAFINIMANANA, M
VACQUIE, S
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3777 - 3787
[33] Two-temperature transport coefficients of SF6-N2 plasma
Yang, Fei
Chen, Zhexin
Wu, Yi
Rong, Mingzhe
Guo, Anxiang
Liu, Zirui
Wang, Chunlin
PHYSICS OF PLASMAS, 2015, 22 (10)
[34] Thermodynamic Properties and Transport Coefficients of SF6-N2 Arc Plasma
Li, Xin
Chen, Peilong
Zhu, Shijian
Ouyang, Zeyu
Zhong, Yao
Wang, Dibo
Wang, Guanyu
2024 THE 7TH INTERNATIONAL CONFERENCE ON ENERGY, ELECTRICAL AND POWER ENGINEERING, CEEPE 2024, 2024, : 208 - 213
[35] Monte Carlo Simulating on Particle Dynamics of SF6-N2 Mixtures
张连星
郑殿春
陈雪锋
哈尔滨理工大学学报, 2010, (04) : 89 - 93
[36] FLASHOVER STUDIES OF CYLINDRICAL SPACERS IN SF6-N2 MIXTURES.
Laghari, J.R.
Qureshi, A.H.
Proceedings of the Annual Reliability and Maintainability Symposium, 1980,
[37] SF6-N2的介电强度和灭弧特性
王幽林
电工电能新技术, 1985, (02) : 23 - 31
[38] Decomposition Characteristics of SF6-N2 Gas Mixtures under Corona Discharge
Wu, Zhanyu
Dong, Ming
Ding, Weidong
Ren, Ming
Zhang, Chongxing
Li, Yang
2017 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENON (CEIDP), 2017, : 564 - 567
[39] Pulsed townsend measurement of electron transport and ionization in SF6-N2 mixtures
Hernández-Avila, JL
de Urquijo, J
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (12) : L51 - L54
[40] VOLTAGE-TIME CHARACTERISTICS OF PARTICLE-INITIATED IMPULSE BREAKDOWN IN SF6 AND SF6-N2
ETEIBA, MB
RIZK, FAM
IEEE TRANSACTIONS ON POWER APPARATUS AND SYSTEMS, 1983, 102 (05): : 1352 - 1360

← 1 2 3 4 5 →