Fabrication of WSix micron structures using RIE in SF6-N2 mixture

被引：0

作者：

机构：

[1] Cheng, Meiqiao

[2] Fu, Shaoyun

[3] Li, Jianzhon

来源：

Cheng, Meiqiao | 1600年 / 11期

关键词：

Semiconducting Gallium Arsenide - Semiconductor Device Manufacture--Etching - Silicon Compounds - Tungsten Compounds;

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摘要：

This paper reports experiments on reactive ion etching of WSix using SF6-Ar and SF6-N2 as etchants. Etching characteristics are well studied with SF6-N2 system. N2 is found to be superior as a diluent of SF6 in etching micrometer structures of WSix, and having good repeatability. GaAs MESFET and OEIC devices have been fabricated with the aid of etching.

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