Fabrication of WSix micron structures using RIE in SF6-N2 mixture

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作者：
机构：
[1] Cheng, Meiqiao
[2] Fu, Shaoyun
[3] Li, Jianzhon
来源：
Cheng, Meiqiao | 1600年 / 11期
关键词：
Semiconducting Gallium Arsenide - Semiconductor Device Manufacture--Etching - Silicon Compounds - Tungsten Compounds;
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摘要：
This paper reports experiments on reactive ion etching of WSix using SF6-Ar and SF6-N2 as etchants. Etching characteristics are well studied with SF6-N2 system. N2 is found to be superior as a diluent of SF6 in etching micrometer structures of WSix, and having good repeatability. GaAs MESFET and OEIC devices have been fabricated with the aid of etching.
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