Reduced-pressure chemical vapor synthesis of nanocrystalline silicon carbide powders

被引:0
|
作者
Thin Films Division, Materials Science Department, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt, Germany [1 ]
机构
来源
Chem Vapor Deposition | / 4卷 / 143-149期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Reduced-pressure chemical vapor synthesis of nanocrystalline silicon carbide powders
    Klein, S
    Winterer, M
    Hahn, H
    CHEMICAL VAPOR DEPOSITION, 1998, 4 (04) : 143 - 149
  • [2] Synthesis of nanocrystalline silicon carbide powders
    Cheng, Z
    Sacks, MD
    Wang, CA
    27TH INTERNATIONAL COCOA BEACH CONFERENCE ON ADVANCED CERAMICS AND COMPOSITES: A, 2003, 24 (03): : 23 - 32
  • [3] Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures ≤550 °C
    Sedky, S
    Witvrouw, A
    Caymax, M
    Saerens, A
    Van Houtte, P
    JOURNAL OF MATERIALS RESEARCH, 2002, 17 (07) : 1580 - 1586
  • [4] Characterization of Reduced-pressure Chemical Vapor Deposition Polycrystalline Silicon Germanium Deposited at Temperatures ≤550 °C
    Sherif Sedky
    Ann Witvrouw
    Matty Caymax
    Annelies Saerens
    Paul Van Houtte
    Journal of Materials Research, 2002, 17
  • [5] In-situ analysis of the chemical vapor synthesis of nanocrystalline silicon carbide by aerosol mass spectrometry
    Lee, IK
    Winterer, M
    Hahn, H
    Janzen, C
    Lindackers, D
    Roth, P
    NANOPHASE AND NANOCOMPOSITE MATERIALS IV, 2002, 703 : 173 - 178
  • [6] Synthesis of Bulk BC8 Silicon Allotrope by Direct Transformation and Reduced-Pressure Chemical Pathways
    Kurakevych, Oleksandr O.
    Le Godec, Yann
    Crichton, Wilson A.
    Guignard, Jeremy
    Strobel, Timothy A.
    Zhang, Haidong
    Liu, Hanyu
    Diogo, Cristina Coelho
    Polian, Alain
    Menguy, Nicolas
    Juhl, Stephen J.
    Gervais, Christel
    INORGANIC CHEMISTRY, 2016, 55 (17) : 8943 - 8950
  • [7] Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers
    Popadic, M.
    Scholtes, T. L. M.
    De Boer, W.
    Sarubbi, F.
    Nanver, L. K.
    JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (11) : 2323 - 2328
  • [8] Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers
    M. Popadić
    T. L. M. Scholtes
    W. de Boer
    F. Sarubbi
    L. K. Nanver
    Journal of Electronic Materials, 2009, 38 : 2323 - 2328
  • [9] In situ implementation of silicon epitaxial layer on amorphous SiO2 using reduced-pressure chemical vapor deposition
    Kim, Sang-Hoon
    Lee, Seong Hyun
    Park, Jeong-Woo
    Roh, Tae Moon
    Suh, Dongwoo
    APPLIED MATERIALS TODAY, 2021, 24
  • [10] Synthesis of silicon carbide nanotubes by chemical vapor deposition
    Xie, Zhengfang
    Tao, Deliang
    Wang, Jiqing
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2007, 7 (02) : 647 - 652