共 50 条
- [21] INFLUENCE OF GAMMA-IRRADIATION ON ELECTRICAL-PROPERTIES OF N-TYPE SI WITH AN INHOMOGENEOUS IMPURITY DISTRIBUTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1166 - 1167
- [22] INVESTIGATION OF THE INFLUENCE OF GAMMA-IRRADIATION ON THE PROPERTIES OF N-TYPE SI-MN BY THE DLTS METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (09): : 995 - 996
- [23] Electronic Properties of Au/Cu2O/n-type Si Heterojunction for Energy Conversion 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 2807 - 2810
- [24] INFLUENCE OF IRRADIATION TEMPERATURE AND OF NATURE OF DOPANT ON FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 303 - 305
- [25] INFLUENCE OF THE IMPURITY COMPOSITION OF N-TYPE SI ON THE RADIATION DEFECT FORMATION AND DEGRADATION OF THE MINORITY-CARRIER LIFETIME DUE TO GAMMA-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (08): : 804 - 808
- [26] Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 159-60 : 177 - 181
- [27] Features of conduction mechanism in n-type Mg2Si1-xSnx solid solutions TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03, 2003, : 142 - 145
- [28] INFLUENCE OF TEMPERATURE DURING 640-MEV PROTON IRRADIATION ON FORMATION OF RADIATION DEFECTS IN N-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (10): : 1146 - 1148
- [29] INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 303 - 305
- [30] Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects Semiconductors, 1999, 33 : 504 - 507