HIGH-EFFICIENCY 35-GHz GaAs MESFET'S.

被引：0
|
作者：
Taylor, Gordon C. [1 ]
Eron, Murat [1 ]
Bechtle, Daniel W. [1 ]
Liu, Shing-Gong [1 ]
Camisa, Raymond L. [1 ]
机构：
[1] RCA Lab, Princeton, NJ, USA, RCA Lab, Princeton, NJ, USA
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 06期
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摘要：
14
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页码：1259 / 1263
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