less than 110 greater than -ORIENTED GaAs MESFET's.

被引：0

作者：

Pao, Y.C. ^{[1
]}

Ou, Weiming ^{[1
]}

Harris Jr., J.S. ^{[1
]}

机构：

[1] Varian Associates, Santa Clara, CA,, USA, Varian Associates, Santa Clara, CA, USA

来源：

Electron device letters | 1988年 / 9卷 / 03期

关键词：

GALLIUM ARSENIDE MESFET - METAL-SEMICONDUCTOR FET (MESFET) - SUBSTRATES ORIENTATION;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：119 / 121

共 50 条

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