ESR and IR studies on p-doped a-Si:H/a-Si:H junctions

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作者：
Zhang, Fangqing [1 ]
Sun, Guosheng [1 ]
Chen, Guanghua [1 ]
机构：
[1] Lanzhou Univ, China
来源：
Physica Status Solidi (A) Applied Research | 1988年 / 108卷 / 02期
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