LASER BEAM DEFOCUSING AT 1. 06 mu m BY CARRIER EXCITATION IN SILICON.

被引：0
|
作者：
Chen Jun [1 ]
Eichler, H.-J. [1 ]
机构：
[1] Technische Univ Berlin, Berlin, West Ger, Technische Univ Berlin, Berlin, West Ger
来源：
Applied physics. B, Photophysics and laser chemistry | 1988年 / B45卷 / 03期
关键词：
LASERS; SOLID STATE - SEMICONDUCTING SILICON - Charge Carriers;
D O I：
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中图分类号：
学科分类号：
摘要：
Laser beams from a 15 ns pulsed Nd:YAG laser are defocused after passing silicon crystals with 400 mu m thickness. The beam profile changes into a ring structure at incident laser energies up to 30 mJ and energy densities of 440 mJ/cm**2. The experimental deflection angles agree with calculations assuming refractive index changes due to electron-hole pairs produced by interband absorption.
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页码：121 / 124
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