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- [2] 1. 5 mu m InGaAsP FABRY-PEROT CAVITY-TYPE LASER AMPLIFIERS. Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1987, 70 (02): : 38 - 52
- [3] GAIN MEASUREMENTS ON LASER AMPLIFIERS FOR OPTICAL TRANSMISSION SYSTEMS AT 1. 5 mu m. British Telecom technology journal, 1985, 3 (03): : 25 - 29
- [8] 1. 3 mu m- AND 1. 55 mu m-InGaAsP/InP LASER DIODES. Japan Annual Reviews in Electronics, Computers & Telecommunications, 1982, 1 : 177 - 188
- [9] 1. 3 mu m InGaAsP MULTIQUANTUM-WELL SEMICONDUCTOR LASER FABRICATED BY LPE METHOD. National technical report, 1986, 32 (02): : 255 - 261